Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires

Abstract

The effects of Bi incorporation on the recombination process in wurtzite (WZ) GaBiAs nanowires are studied by employing micro-photoluminescence (mu-PL) and time-resolved PL spectroscopies. It is shown that at low temperatures (T amp;lt; 75 K) Bi-induced localization effects cause trapping of excitons within band-tail states, which prolongs their lifetime and suppresses surface nonradiative recombination (SNR). With increasing temperature, the trapped excitons become delocalized and their lifetime rapidly shortens due to facilitated SNR. Furthermore, Bi incorporation in the GaBiAs NW is found to have a minor influence on the surface states responsible for SNR. ; Funding Agencies|Linkoping University; Swedish Research CouncilSwedish Research Council [2016-05091]; Swedish Energy AgencySwedish Energy Agency [P40119-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]