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A comprehensive systematic method for chemical vapor deposition modeling consisting of seven well-defined steps is presented. The method is general in the sense that it is not adapted to a certain type of chemistry or reactor configuration. The method is demonstrated using silicon carbide (SiC) as a model system, with accurate matching to measured data without tuning of the model. We investigate the cause of several experimental observations for which previous research reports only have had speculative explanations. In contrast to previous assumptions, we can show that SiCl2 does not contribute to SiC deposition. We can confirm the presence of larger molecules at both low and high C/Si ratios, which have been thought to cause so-called step-bunching. We can also show that high concentrations of Si lead to other Si molecules other than the ones contributing to growth, which also explains why the C/Si ratio needs to be lower at these conditions to maintain high material quality as well as the observed saturation in deposition rates. Due to its independence of a chemical system and reactor configuration, the method paves the way for a general predictive CVD modeling tool. ; Funding Agencies|Swedish Foundation for Strategic Research project "SiC-the Material for Energy-Saving Power Electronics"Swedish Foundation for Strategic Research [EM11-0034]; Knut & Alice Wallenberg Foundation (KAW)Knut & Alice Wallenberg Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish Research Council (VR)Swedish Research Council

Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp(2) hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 degrees C on alpha-Al2O3 with an AlN buffer layer (AlN/alpha-Al2O3). At 1500 degrees C, h-BN grows with a layer-by-layer growth mode on AlN/alpha-Al2O3 up to similar to 4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp(2)-BN employing CVD. (C) 2015 American Vacuum Society. ; Funding Agencies|Swedish Research Council (VR) [621-2013-5585]; Carl Tryggers Stiftelse [12:175]; CeNano Program at Linkoping University; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Bolyai Janos research scholarship of Hungarian Academy of Sciences

Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 degrees C and had a constant rate of decomposition from 150 to 180 degrees C. The ultimate decomposition product was suspected to be bisdimethylamidoN, N,-dimethyl-N,N -diisopropylguanidinato-indium(III), which appeared to be an intractable, nonvolatile polymer. Published by the AVS. ; Funding Agencies|Swedish foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA15-0018]; COST Action [MP1402]; COST (European Cooperation in Science and Technology); Vinnova VINNMER Marie Curie incoming mobility program (Vinnova Grant) [2015-03714]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish Research Council (VR Grant) [2016-05137_4]; Wenner-Gren foundations

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AIN, GaN, InN, and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns uses ammonia as the nitrogen precursor; however, this gives an inefficient CVD chemistry, forcing N/13 ratios of 100/1 or more. Here, we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations show that while the methylamines have a more reactive gas-phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, while instead micrometer-sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to be considered than the gas-phase chemistry when searching for better nitrogen precursors for 13-N CVD. ; Funding Agencies|Swedish foundation for Strategic Research [SSF-RMA 15-0018]; Vinnova VINNMER Marie Curie incoming mobility program [2015-03714]; COST (European Cooperation in Science and Technology) [MP1402]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

Chemical Vapor Deposition (CVD) is one of the technology platforms forming the backbone of the semiconductor industry and is vital in the production of electronic devices. To upscale a CVD process from the lab to the fab, large area uniformity and high run-to-run reproducibility are needed. We show by a combination of experiments and gas phase kinetics modeling that the combinations of Si and C precursors with the most well-matched gas phase chemistry kinetics gives the largest area of of homoepitaxial growth of SiC. Comparing CH4, C2H4 and C3H8 as carbon precursors to the SiF4 silicon precursor, CH4 with the slowest kinetics renders the most robust CVD chemistry with large area epitaxial growth and low temperature sensitivity. We further show by quantum chemical modeling how the surface chemistry is impeded by the presence of F in the system which limits the amount of available surface sites for the C to adsorb. ; Funding agencies: Knut & Alice Wallenberg Foundation (KAW) project Isotopic Control for Ultimate Material Properties; Swedish Foundation for Strategic Research project SiC - the Material for Energy-Saving Power Electronics [EM11-0034]; Swedish Government Strategic Research

Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stable precursors for atomic layer deposition. The triazenide ligand is relatively unexplored as an alternative ligand system. Herein, we present six new Al(III) complexes bearing three sets of a 1,3-dialkyltriazenide ligand. These complexes volatilize quantitatively in a single step with onset volatilization temperatures of similar to 150 degrees C and 1 Torr vapor pressures of similar to 134 degrees C. Differential scanning calorimetry revealed that these Al(III) complexes exhibited exothermic events that overlapped with the temperatures of their mass loss events in thermogravimetric analysis. Using quantum chemical density functional theory computations, we found a decomposition pathway that transforms the relatively large hexacoordinated Al(III) precursor into a smaller dicoordinated complex. The pathway relies on previously unexplored interligand proton migrations. These new Al(III) triazenides provide a series of alternative precursors with unique thermal properties that could be highly advantageous for vapor deposition processes of Al containing materials. ; Funding Agencies|Swedish foundation for Strategic Research through project "Timeresolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation [KAW 2013.0049]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO Mat LiU 2009 00971]

Indium nitride (InN) is an interesting material for future high-frequency electronics due to its high electron mobility. The problematic deposition of InN films currently prevents full exploration of InN-based electronics. We present studies of atomic layer deposition (ALD) of InN using In precursors with bidentate ligands forming In-N bonds: tris(N,N-dimethyl-N,N -diisopropylguanidinato)indium(III), tris(N,N-diisopropylamidinato)indium(III), and tris(N,N-diisopropylformamidinato)indium(III). These compounds form a series were the size of the substituent on the endocyclic position decreases from -NMe2 to -Me and to -H, respectively. We show that when the size of the substituent decreases, the InN films deposited have a better crystalline quality, of better optical quality, lower roughness, and an In/N ratio closer to unity. From quantum chemical calculations, we show that the smaller substituents lead to less steric repulsion and weaker bonds between the ligand and In center. We propose that these effects render a more favored surface chemistry for the nitridation step in the ALD cycle, which explains the improved film properties. ; Funding Agencies|Swedish foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundation through the project "Bridging the THz gap" [KAW 2013.0049]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

Only a few M-N bonded divalent group 14 precursors are available for vapor deposition, in particular for Ge and Pb. A majority of the reported precursors are dicoordinated with the Sn(II) amidinates, the only tetracoordinated examples. No Ge(II) and Pb(II) amidinates suitable for vapor deposition have been demonstrated. Herein, we present tetracoordinated Ge(II), Sn(II), and Pb(II) complexes bearing two sets of chelating 1,3-di-tert-butyltriazenide ligands. These compounds are thermally stable, sublime quantitatively between 60 and 75 degrees C (at 0.5 mbar), and show ideal single-step volatilization by thermogravimetric analysis. ; Funding Agencies|Swedish Foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg Foundation through the project "Bridging the THz gap" [KAW 2013.0049]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

Plant research and breeding has a long and successful history in the Scandinavian countries, Denmark, Finland, Norway and Sweden. Researchers in the region have been early in adopting plant gene technologies as they developed. This review gives a background, as well as discuss the current and future progress of plant gene technology in these four countries. Country-specific details of the regulation of genetically modified plants are described, as well as similarities and differences in the approach to regulation of novel genome-editing techniques. Also, the development of a sustainable bioeconomy may encompass the application of plant gene technology and we discuss whether or not this is reflected in current associated national strategies. In addition, country-specific information about the opinion of the public and other stakeholders on plant gene technology is presented, together with a country-wise political comparison and a discussion of the potential reciprocal influence between public opinion and the political process of policy development. The Scandinavian region is unique in several aspects, such as climate and certain agriculturally related regulations, and at the same time the region is vulnerable to changes in plant breeding investments due to the relatively small market sizes. It is therefore important to discuss the role and regulation of innovative solutions in Scandinavian plant research and breeding. ; publishedVersion

Plant research and breeding has a long and successful history in the Scandinavian countries, Denmark, Finland, Norway and Sweden. Researchers in the region have been early in adopting plant gene technologies as they developed. This review gives a background, as well as discuss the current and future progress of plant gene technology in these four countries. Country-specific details of the regulation of genetically modified plants are described, as well as similarities and differences in the approach to regulation of novel genome-editing techniques. Also, the development of a sustainable bioeconomy may encompass the application of plant gene technology and we discuss whether or not this is reflected in current associated national strategies. In addition, country-specific information about the opinion of the public and other stakeholders on plant gene technology is presented, together with a country-wise political comparison and a discussion of the potential reciprocal influence between public opinion and the political process of policy development. The Scandinavian region is unique in several aspects, such as climate and certain agriculturally related regulations, and at the same time the region is vulnerable to changes in plant breeding investments due to the relatively small market sizes. It is therefore important to discuss the role and regulation of innovative solutions in Scandinavian plant research and breeding. ; Peer reviewed

Boron nitride (BN) layers with sp(2) bonding have been grown by metal organic chemical vapor deposition on AlN underlayers, which are deposited on c-plane sapphire substrates. Two different boron precursors were employed-trimethylboron and triethylboron-while ammonia was used as the nitrogen precursor. The BN obtained epitaxial BN films contain ordered rhombohedral (rBN) and partially ordered turbostratic (tBN) stackings as evidenced by x-ray diffraction analysis. We discriminatively identify the PL signatures of the rBN and tBN from those typical of the hexagonal (hBN) and Bernal stackings (bBN). The optical signature of tBN appears at 5.45eV, and it intercalates between the two recombination bands typical of rBN at 5.35eV (strong intensity) and 5.55eV(weaker intensity). The analogs of the high intensity band at 5.35eV in rBN sit at 5.47eV for hBN and at 5.54eV for bBN. ; Funding Agencies|network GaNeX [ANR-11-LABX-424 0014]; BONASPES project [ANR-19-CE30 0007]; ZEOLIGHT project [ANR-19-CE08-0016]; Universite de Montpellier; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2017-04164]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [IS14-0027]; Carl Tryggers Foundation for Scientific Research [CTS 14:189]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University [2009-00971]; Office of Naval ResearchOffice of Naval Research [N00014-20-1-2474, 428]; National Science FoundationNational Science Foundation (NSF) [CMMI 429, 1538127]

Alkylboranes, such as trimethylboron (TMB) and triethylboron (TEB), are promising alternative precursors in low temperature chemical vapor deposition (CVD) of boron-containing thin films. In this study, CVD growth of B-C films using TMB and quantum-chemical calculations to elucidate a gas phase chemical mechanism were undertaken. Dense, amorphous, boron-rich (B/C 1.5-3) films were deposited at 1000 degrees C in both dihydrogen and argon ambients, while films with crystalline B4C and B25C inclusions were deposited at 1100 degrees C in dihydrogen. A script-based automatization scheme was implemented for the quantum-chemical computations to enable time efficient screening of thousands of possible gas phase CVD reactions. The quantum-chemical calculations suggest TMB is mainly decomposed by an unimolecular alpha-H elimination of methane, which is complemented by dihydrogen-assisted elimination of methane in dihydrogen. ; Funding Agencies|European Spallation Source ERIC; Knut and Alice Wallenberg Foundation; German Science Foundation [GRK 1782]; Swedish Foundation for Strategic Research (SSF) [IS14-0027]; COST Action [MP1402]; COST (European Cooperation in Science and Technology); Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new In(III) precursor, the first example of a homoleptic triazenide used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 145 degrees C and negligible residual mass. Strikingly, two temperature intervals with self-limiting growth were observed when depositing InN films. In the high-temperature interval, the precursor underwent a gas-phase thermal decomposition inside the ALD reaction chamber to produce a more reactive In(III) compound while retaining self-limiting growth behavior. Density functional theory calculations revealed a unique two-step decomposition process, which liberates three molecules of each propene and N-2 to give a smaller tricoordinated In(III) species. Stoichiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. The InN films deposited at 325 degrees C had a sheet resistivity of 920 Omega/sq. This new triazenide precursor enables ALD of InN for semiconductor applications and provides a new family of M-N bonded precursors for future deposition processes. ; Funding Agencies|Swedish foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundation through the project "Bridging the THz gap" [KAW 2013.0049]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

A recent study proposed new TNM groupings for better survival discrimination among stage groups for medullary thyroid carcinoma (MTC) and validated these groupings in a population-based cohort in the United States. However, it is unknown how well the groupings perform in populations outside the United States. Consequently, we conducted the first population-based study aiming to evaluate if the recently proposed TNM groupings provide better survival discrimination than the current American Joint Committee on Cancer (AJCC) TNM staging system (seventh and eighth edition) in a nationwide MTC cohort outside the United States. This retrospective cohort study included 191 patients identified from the nationwide Danish MTC cohort between 1997 and 2014. In multivariate analysis, hazard ratios for overall survival under the current AJCC TNM staging system vs the proposed TNM groupings with stage I as reference were 1.32 (95% CI: 0.38-4.57) vs 3.04 (95% CI: 1.38-6.67) for stage II, 2.06 (95% CI: 0.45-9.39) vs 3.59 (95% CI: 1.61-8.03) for stage III and 5.87 (95% CI: 2.02-17.01) vs 59.26 (20.53-171.02) for stage IV. The newly proposed TNM groupings appear to provide better survival discrimination in the nationwide Danish MTC cohort than the current AJCC TNM staging. Adaption of the proposed TNM groupings by the current AJCC TNM staging system may potentially improve accurateness in survival discrimination. However, before such an adaption further population-based studies securing external validity are needed.