Rhombohedral and turbostratic boron nitride : X-ray diffraction and photoluminescence signatures
Boron nitride (BN) layers with sp(2) bonding have been grown by metal organic chemical vapor deposition on AlN underlayers, which are deposited on c-plane sapphire substrates. Two different boron precursors were employed-trimethylboron and triethylboron-while ammonia was used as the nitrogen precursor. The BN obtained epitaxial BN films contain ordered rhombohedral (rBN) and partially ordered turbostratic (tBN) stackings as evidenced by x-ray diffraction analysis. We discriminatively identify the PL signatures of the rBN and tBN from those typical of the hexagonal (hBN) and Bernal stackings (bBN). The optical signature of tBN appears at 5.45eV, and it intercalates between the two recombination bands typical of rBN at 5.35eV (strong intensity) and 5.55eV(weaker intensity). The analogs of the high intensity band at 5.35eV in rBN sit at 5.47eV for hBN and at 5.54eV for bBN. ; Funding Agencies|network GaNeX [ANR-11-LABX-424 0014]; BONASPES project [ANR-19-CE30 0007]; ZEOLIGHT project [ANR-19-CE08-0016]; Universite de Montpellier; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2017-04164]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [IS14-0027]; Carl Tryggers Foundation for Scientific Research [CTS 14:189]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University [2009-00971]; Office of Naval ResearchOffice of Naval Research [N00014-20-1-2474, 428]; National Science FoundationNational Science Foundation (NSF) [CMMI 429, 1538127]