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Im Zentrum dieses Artikels stehen Vorstellungen von Moderne und Rationalität in den Genossenschaftsbewegungen und Agrarparteien Schwedens, Galiziens und Estlands um die Wende zum 20. Jahrhundert. In vergleichender Perspektive wird analysiert, wie diese Leitbegriffe in der Agrarpresse Programme und Projekte verschiedener gesellschaftlicher Teilsysteme (Wissenschaft, Bildung, Nationalbewegung) strukturierten. Die von den Autoren ausgewählten Zeitschriften reflektieren die Lage in unterschiedlichen Regionen und Teilbereichen der Agrarwirtschaft. Die These lautet, dass "Modernität" fast durchgängig als ein maskulines Projekt verstanden wurde. Unterschiede bezogen sich vor allem auf die politischen Funktionen von Agrargenossenschaften, die in Estland und Galizien stark national, während sie in Schweden konservativ gegen die Linke konfiguriert waren. In einem zweiten Teil widmen sich die Autoren einer Sozialstudie der Produzenten und Leser der herangezogenen Zeitschriften.

We investigate the role metal vacancies play in the phase stability and properties of Al1-delta B2 using first-principles calculations, alloy theory simulations, phonon calculations, and experimental in situ x-ray diffraction measurements of thermal expansion. The relevant concentrations and configurations of metal vacancies are analyzed using cluster expansion and special quasirandom structure methods combined with vibrational free energy calculations within the quasiharmonic approximation for ordered and disordered phases. We find that electronic structure effects stabilize Al1-delta B2 in a narrow composition range of 0.073 < delta < 0.096 depending only weakly on temperature while they destabilize ideal stoichiometric AlB2. This composition corresponds to the narrow range 0:311 <= x <= 0.317 in the formulation of AlxB1-x, which can explain the appearance of this phase as a line compound with the ideal AlB2 stoichiometry in most phase diagrams. The ordered structures of vacancies found at low temperature are destabilized and disordered already at a low temperature of similar to 200 K. Our experiments observe linear thermal expansion coefficients alpha(a) = 4.8 x 10(-6) K-1 and alpha(c) = 10.85 x 10(-6) K-1 at room temperature. Only thermal expansion calculations of disordered phases compare well with these measurements, and, in particular, stoichiometric vacancy-free AlB2 shows dramatic overestimations of the experimental thermal expansion. These results highlight the importance of disordered Al vacancies on both stability and vibrational properties of Al1-delta B2. (c) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license ; Funding Agencies|Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Research Council (VR)Swedish Research Council [2014-6336, 2019-05403]; Marie Sklodowska Curie Actions, Cofund [INCA 600398]; Knut and Alice Wallenberg Foundation (Wallenberg Scholar Grant) [KAW-2018.0194]; Swedish Foundation for Strategic Research through the Future Research Leaders 6 program [FFL 15-0290]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFOMatLiU) [2009 00971]; Sci-Super VI fund, Faculty of Science, Chulalongkorn UniversityChulalongkorn University

The electronic structure and chemical bonding of ß-Ta synthesized as a thin 001-oriented film (space group P 21m) is investigated by 4f core level and valence band X-ray photoelectron spectroscopy and compared to α-Ta bulk. For the b-phase, the 4f7/2 peak is located at 21.91 eV and with the 4f5/2 at 23.81 eV which is 0.16 eV higher compared to the corresponding 4f peaks of the a-Ta reference. We suggest that this chemical shift originates from higher resistivity and tensile strain in the ß-Ta film. Furthermore, the 5d-5s states at the bottom of the valence band are shifted by 0.75 eV towards higher binding energy in ß-Ta compared to α-Ta. This is a consequence of the lower number of nearest neighbors with four in ß-Ta compared to eight in the α-Ta phase. The difference in the electronic structures, spectral line shapes of the valence band and the energy positions of the Ta 4f, 5p core-levels of b-Ta versus a-Ta are discussed in relation to calculated states of ß-Ta and α-Ta. In particular, the lower number of states at the Fermi level of ß-Ta (0.557 states/eV/atom) versus α-Ta (1.032 states/eV/atom) that according to Mott's law should decrease the conductivity in metals and affect the stability by charge redistribution in the valence band. This is experimentally supported from resistivity measurements of the film yielding a value of ~170 µW cm in comparison to α-Ta bulk with a reported value of ~13.1 µW cm. ; Funding agencies: Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University [2009-00971]; Swedish Energy Research [43606-1]; Carl Tryggers Foundation [CTS16:303, CTS14:310, CTS 17:166]; Knut and Alice Wallenber

Lawns have a significant influence on the cityscape as one of the essential elements of green spaces and an important part of people's everyday lives. Most people in the Western world view lawns as a compulsory element of the urban landscape, almost an icon, without questioning their social, symbolic, ecological or aesthetic values. This research is a part of the conceptual framework and methodological approaches that are being used in an ongoing transdisciplinary collaboration project to study lawns in Sweden as a social and ecological phenomenon.The overall aim of this study was to investigate social and cultural perceptions of lawns, as well as motives behind decisions about the establishment and management of lawns in Sweden. Two multifamily housing typologies, the 'Million Programme' and People's Homes', were examined due to their dominance in Swedish cities. We also studied how an alternative vision of conventional lawns can be applied and accepted by urban residents. We estimated lawn cover in multi-family housing areas and links to people's perception and use of lawns. Questionnaires, semi-structured interviews and observational studies were used (N = 300). Our results showed that people like lawns even if they do not always directly use them. Lawns cover the most significant amount of outdoor spaces in all multi-family residential areas and accompany people everywhere from the house to the schoolyard or park. The total lawn cover in the study areas was 27.8%. Lawns were particularly valued as important places for different outdoor activities (playing, resting, picnicking, walking, socialising) and enjoying the green colour. However people do not want to use a vast monotonous lawn, but a variety of spaces that provide good conditions for different senses (sound, smell, touch and sight) and activities. Alternative lawns were also appreciated by many citizens, politicians, planners and managers. The implementation of new types of lawns requires special planning and design solutions adjusted for each particular neighbourhood.

Glancing angle deposition (GLAD) of AlN nanostructures was performed at room temperature by reactive magnetron sputtering in a mixed gas atmosphere of Ar and N-2. The growth behavior of nanostructures shows strong dependence on the total working pressure and angle of incoming flux. In GLAD configuration, the morphology changed from coalesced, vertical nanocolumns with faceted terminations to highly inclined, fan-like, layered nanostructures (up to 38 degrees); while column lengths decreased from around 1743 to 1068 nm with decreasing pressure from 10 to 1.5 mTorr, respectively. This indicates a change in the dominant growth mechanism from ambient flux dependent deposition to directional ballistic shadowing deposition with decreasing working pressures, which is associated with the change of energy and incident angle of incoming reactive species. These results were corroborated using simulation of metal transport (SiMTra) simulations performed at similar working pressures using Ar and N separately, which showed the average particle energy and average angle of incidence decreased while the total average scattering angle of the metal flux arriving at substrate increased with increasing working pressures. Observing the crystalline orientation of GLAD deposited wurtzite AlN nanocolumns using X-ray diffraction (XRD), pole-figure measurements revealedc-axis growth towards the direction of incoming flux and a transition from fiber-like to biaxial texture took place with increasing working pressures. Under normal deposition conditions, AlN layer morphology changed from {0001} to {10 (1) over bar1} with increasing working pressure because of kinetic energy-driven growth. ; Funding Agencies|VetenskapsradetSwedish Research Council [2018-04198]; Energimyndigheten [46658-1]; Stiftelsen Olle Engkvist ByggmastareSwedish Research Council [197-0210]; Linkoping University Library; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]

The influence of B4C incorporation during magnetron sputter deposition of Cr/Sc multilayers intended for soft X-ray reflective optics is investigated. Chemical analysis suggests formation of metal: boride and carbide bonds which stabilize an amorphous layer structure, resulting in smoother interfaces and an increased reflectivity. A near-normal incidence reflectivity of 11.7%, corresponding to a 67% increase, is achieved at λ = 3.11 nm upon adding 23 at.% (B + C). The advantage is significant for the multilayer periods larger than 1.8 nm, where amorphization results in smaller interface widths, for example, giving 36% reflectance and 99.89% degree of polarization near Brewster angle for a multilayer polarizer. The modulated ion-energy-assistance during the growth is considered vital to avoid intermixing during the interface formation even when B + C are added. ; Funding agencies: Swedish Science Council; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

Zirconium diboride (ZrB2) exhibits high hardness and high melting point, which is beneficial for applications in for e.g. metal cutting. However, there is limited data on the mechanical properties of ZrB2 films and no data on epitaxial films. In this study, ZrB2(0001) thin films, with thicknesses up to 1.2 μm, have been deposited on Al2O3(0001) substrates by direct current magnetron sputtering from a compound target. X-ray diffraction and transmission electron microscopy show that the films grow epitaxially with two domain types exhibiting different in-plane epitaxial relationships to the substrate. The out-of-plane epitaxial relationship was determined to ZrB2(0001)|Al2O3(0001) and the in-plane relationships of the two domains to ZrB2[10 0]‖Al2O3[10 0] and ZrB2[11 0]‖Al2O3[10 0]. Mechanical properties of the films, evaluated by nanoindentation, showed that all films exhibit hardness values above 45 GPa, a reduced Young's modulus in the range 350–400 GPa, and a high elastic recovery of 70% at an applied load of 9000 μN. ; Funding agencies: Swedish Research Council (VR) [621-2010-3921]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Knut and Alice Wallenberg Foundation

Cr2N is commonly found as a minority phase or inclusion in stainless steel, CrN-based hard coatings, etc. However, studies on phase-pure material for characterization of fundamental properties are limited. Here, Cr2N thin films were deposited by reactive magnetron sputtering onto (0001) sapphire substrates. X-ray diffraction and pole figure texture analysis show Cr2N (0001) epitaxial growth. Scanning electron microscopy imaging shows a smooth surface, while transmission electron microscopy and X-ray reflectivity show a uniform and dense film with a density of 6.6gcm(-3), which is comparable to theoretical bulk values. Annealing the films in air at 400 degrees C for 96h shows little signs of oxidation. Nano-indentation shows an elastic-plastic behavior with H=18.9GPa and E-r=265GPa. The moderate thermal conductivity is 12Wm(-1)K(-1), and the electrical resistivity is 70cm. This combination of properties means that Cr2N may be of interest in applications such as protective coatings, diffusion barriers, capping layers and contact materials. ; Funding Agencies|European Research Council under the European Communitys Seventh Framework Programme (FP/2007-2013)/ERC Grant [335383]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [200900971]; Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Knut and Alice Wallenberg foundation through the Wallenberg Academy Fellows program; Swedish Research Council (VR) [2016-03365]; Aforsk Foundation [16-359]; Carl Tryggers Foundation [CTS 17:166]

The authors investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray photoelectron spectroscopy shows C–Ti and Si–C bonding in the Ti3SiC2 films and Si–Si bonding in the Ti3SiC2 compound target. X-ray diffraction reveals that the phases Ti3SiC2, Ti4SiC3, and Ti7Si2C5 can be deposited from a Ti3SiC2 compound target at substrate temperatures above 850 °C and with the growth of TiC and the Nowotny phase Ti5Si3Cx at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti3SiC2, Ti4SiC3, and Ti7Si2C5 on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films containing Ti3SiC2, Ti4SiC3, and Ti7Si2C5. ; Funding agencies: Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Swedish Energy Research [43606-1]; Carl Tryggers Foundation [CTS16:303, CTS14:310, CTS 17:166]; Knut

A two-step synthesis approach was utilized to grow CaMnO3 on M-, R- and C-plane sapphire substrates. Radio-frequency reactive magnetron sputtering was used to grow rock-salt-structured (Ca, Mn)O followed by a 3-h annealing step at 800 degrees C in oxygen flow to form the distorted perovskite phase CaMnO3. The effect of temperature in the post-annealing step was investigated using x-ray diffraction. The phase transformation to CaMnO3 started at 450 degrees C and was completed at 550 degrees C. Films grown on R- and C-plane sapphire showed similar structure with a mixed orientation, whereas the film grown on M-plane sapphire was epitaxially grown with an out-of-plane orientation in the [202] direction. The thermoelectric characterization showed that the film grown on M-plane sapphire has about 3.5 times lower resistivity compared to the other films with a resistivity of 0.077cm at 500 degrees C. The difference in resistivity is a result from difference in crystal structure, single orientation for M-plane sapphire compared to mixed for R- and C-plane sapphire. The highest absolute Seebeck coefficient value is -350 mu VK-1 for all films and is decreasing with temperature. ; Funding Agencies|Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Swedish Research Council (VR) [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; European Research Council under the European Communitys Seventh Framework Programme (FP7 = 2007-2013) ERC Grant [335383]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3-y (002) films on a (112 over bar 0)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3-y shows growth with a small in-plane tilt of Funding Agencies|Swedish Research Council (VR)Swedish Research Council [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program [KAW 2020.0196]; Electron Microscopy Laboratory at Linkoping University; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; Swedish Energy AgencySwedish Energy AgencyMaterials & Energy Research Center (MERC) [46519-1]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF 14-0074]

Direct growth of orthorhombic Ta3N5-type Ta-O-N compound thin films, specifically Ta3-xN5-yOy, on Si and sapphire substrates with various atomic fractions is realized by unbalanced magnetron sputtering. Low-degree fiber-textural Ta3-xN5-yOy films were grown through reactive sputtering of Ta in a gas mixture of N-2, Ar, and O-2 with keeping a partial pressure ratio of 3:2:0.1 in a total working pressure range of 5-30 mTorr. With increasing total pressure from 5 to 30 mTorr, the atomic fraction of O in the as-grown Ta3-xN5-yOy films was found to increase from 0.02 to 0.15 while that of N and Ta decrease from 0.66 to 0.54 and 0.33 to 0.31, respectively, leading to a decrease in b lattice constant up to around 1.3%. Metallic TaNx phases were formed without oxygen. For a working pressure of 40 mTorr, an amorphous, O-rich Ta-N-O compound film with a high O fraction of similar to 0.48, was formed, mixed with non-stoichiometric TaON and Ta2O5. By analyzing the plasma discharge, the increasing O incorporation is associated with oxide formation on top of the Ta target due to a higher reactivity of Ta with O than with N. The increase of O incorporation in the films also leads to a optical bandgap widening from similar to 2.22 to similar to 2.96 eV, which is in agreement with the compositional and structural changes from a crystalline Ta3-xN5-yOy to an amorphous O-rich Ta-O-N compound. ; Funding Agencies|Vetenskapseddet [2018-04198]; Energimyndigheten [46658-1]; Stiftelsen 011e Engkvist Byggmastare [197-0210]; Linkoping University Library; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; VR-RFI [821-2012-5144, 2017-00646_9]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF14-0053, 5E13-0333]