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Science and Technology Policy for Development: China's Experience in the Second Half of the Twentieth Century
In: Science, technology & society: an international journal devoted to the developing world, Band 6, Heft 1, S. 252-253
ISSN: 0973-0796
The emergence of new technology enterprises in China: A study of endogenous capability building via restructuring
In: The journal of development studies, Band 32, Heft 4, S. 475-505
ISSN: 1743-9140
The emergence of new technology enterprises in China: A study of endogenous capability building via restructuring
In: The journal of development studies: JDS, Band 32, Heft 4, S. 475-505
ISSN: 0022-0388
World Affairs Online
China's innovation system: ten years on
In: Innovation: organization & management: IOM, Band 18, Heft 4, S. 441-448
ISSN: 2204-0226
Introduction: China's innovation system and the move towards harmonious growth and endogenous innovation
In: Innovation: organization & management: IOM, Band 8, Heft 1-2, S. 1-26
ISSN: 2204-0226
China's Innovation System and the Move Toward Harmonious Growth and Endogenous Innovation
In: Innovation: organization & management: IOM, Band 8, Heft 1, S. 1-26
ISSN: 2204-0226
Book Reviews - China's Industrial Technology: Market Reform and Organizational Change
In: The China quarterly: an international journal for the study of China, Heft 160, S. 1065-1066
ISSN: 0305-7410, 0009-4439
'Patent pool' initiatives in manufacturing clusters in Zhejiang
In: Innovation: organization & management: IOM, Band 8, Heft 1-2, S. 153-159
ISSN: 2204-0226
Identification and modulation of electronic band structures of single-phase B-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Understanding the band structure evolution of (AlxGa1x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of b-(AlxGa1x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic b-phase (AlxGa1x)2O3 (0 x 0.54) films with a preferred (201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (ah) 1/2 / (h-E) unambiguously identifies that b-(AlxGa1x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of b-(AlxGa1x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and U points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection. ; This research was supported by the National Key Research and Development Project (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 11227904), the Natural Science Foundation of Jiangsu Province (Grant Nos. BK20130013 and BK20161401), the Six Talent Peaks Project in Jiangsu Province (2014XXRJ001), the Fundamental Research Funds for the Central Universities (021014380093 and 021014380085) and the Australian Research Council. The computational part of this research was undertaken with the assistance of resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government under the NCRIS program.
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