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The Mexica Empire reached an outstanding social, economic and politic organization among Mesoamerican civilizations. Even though archaeology and history provide substantial information about their past, their biological origin and the demographic consequences of their settlement in the Central Valley of Mexico remain unsolved. Two main hypotheses compete to explain the Mexica origin: a social reorganization of the groups already present in the Central Valley after the fall of the Classic centres or a population replacement of the Mesoamerican groups by migrants from the north and the consequent setting up of the Mexica society. Here, we show that the main changes in the facial phenotype occur during the Classic–Postclassic transition, rather than in the rise of the Mexica. Furthermore, Mexica facial morphology seems to be already present in the early phases of the Postclassic epoch and is not related to the northern facial pattern. A combination of geometric morphometrics with Relethford–Blangero analyses of within- versus among-group variation indicates that Postclassic groups are more variable than expected. This result suggests that intense gene exchange was likely after the fall of the Classic and maybe responsible for the Postclassic facial phenotype. The source population for the Postclassic groups could be located somewhere in western Mesoamerica, since North Mexico and Central Mesoamerican Preclassic and Classic groups are clearly divergent from the Postclassic ones. Similarity among Preclassic and Classic groups and those from Aridoamerica could be reflecting the ancestral phenotypic pattern characteristic of the groups that first settled Mesoamerica.

An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution. ; The authors would like to heartily thank the Clean Room staff of the IMB-CNM for their dedicated work and kind availability. This work is supported and financed in part by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program, ref. FPA2014-55295-C3-2-R and FPA2015-65652-C4-4-R (MINECO/FEDER, UE), and co-financed with FEDER funds and the European Union's Horizon 2020 research and innovation programme under grant agreement No. 654158. The work is also partially supported by the Generalitat de Catalunya (2014-SGR-1596). The authors want to thank Pedro Valdivieso and co-workers at NAYADE facility (CIEMAT) and the staff on the TRIGA nuclear reactor facilities (JSI), for their efficiency and dedication in performing the managing and irradiation of our devices. ; We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI).