Suchergebnisse

A study on the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that, for temperatures above 200 K the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the inter-grain potential barriers. The temperature dependence of the holes mobility, limited by the inter-grain potential barriers, is the main contributor to the observed conductivity thermal activation energy. At lower temperatures, nearest-neigbour and Mott variable range hopping transport in the bulk of the grains are the dominant conduction mechanisms. Based on this study, the important parameters of the electronic structure of the Sb2Se3 thin-film such as free hole density and mobility, inter-grain potential barrier height, intergrain trap density, shallow acceptor ionization energy, acceptor density, net donor density 2 and compensation ratio are reported. ; P. M. P. Salomé acknowledges the funding of Fundacão para Ciência e Tecnologia (FCT) through the project IF/00133/2015. This research is supported by Development of novel ultrathin solar cell architectures for low-light, low-cost and flexible opto-electronic devices project (028075) co-funded by FCT and ERDF through COMPETE2020. B. Vermang has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (grant agreement n 715027). A. Shongalova acknowledges the funding of Erasmus + program 2016/17. This work was funded by FEDER funds through the COMPETE 2020 Programme and by FCT -Portuguese Foundation for Science and Technology under the projects UID/CTM/50025/2013. The financial support from Brazilian funding agencies CNPq, CAPES and FAPEMIG is also acknowledged.

Blends of Si nanocrystals (Si-NCs) and organic semiconductors are promising materials for new optical and electronic devices processed from solutions. Here, we study how the optical properties of composite films containing Si-NCs and the organic semiconductor poly(3-hexylthiophene) (P3HT) are influenced by the composition and morphology resulting from different solution-processing parameters and different solvents used dichlorobenzene vs. chloroform). The optical spectra of the hybrid films are described using a simple phenomenological model, with which we can discern the contribution of each material in the films to the optical properties. From this analysis, we obtain quantitative information about the composition and morphology of the hybrid nanostructured films, which otherwise would be obtained from more demanding microscopy and spectroscopy techniques. For the case of the Si-NC/P3HT blend, we find that in films deposited from dichlorobenzene solutions the Si-NCs contribute sizably to light absorption. ; This work was funded by FCT/I3N via the HybridSolar project, by the DFG via Teilprojekt B2 and by the European Union and the Ministry of Innovation, Science and Research of the German State of North Rhine-Westphalia in the framework of an Objective 2 Programme (European Regional Development Fund, ERDF). Funding is also acknowledged from the Portuguese Foundation for Science and Technology (FCT) through the Projects Nos. PTDC/FIS/112885/2009 and PEst-C/CTM/LA0025/2011 and via the Strategic Project LA ...

A study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the intergrain potential barriers. In this temperature range, the temperature dependence of the mobility of holes, limited by the intergrain potential barriers, is the main contributor to the observed thermal activation energy of the conductivity of 485 meV. However, at lower temperatures, nearest-neighbor and Mott variable range hopping transport in the bulk of the grains turn into the dominant conduction mechanisms. Important parameters of the electronic structure of the Sb2Se3 thin film such as the average intergrain potential barrier height ϕ = 391 meV, the intergrain trap density Nt = 3.4 × 1011 cm−2, the shallow acceptor ionization energy EA0 = 124 meV, the acceptor density NA = 1 × 1017 cm−3, the net donor density ND = 8.3 × 1016 cm−3, and the compensation ratio k = 0, 79 were determined from the analysis of these measurements. ; P. M. P. Salomé acknowledges the funding of Fundação para Ciencêa e Tecnologia (FCT) through the project IF/00133/ ̂2015. This research is supported by the Development of novel ultrathin solar cell architectures for low-light, low-cost, and flexible optoelectronic devices project (028075) co-funded by FCT and ERDF through COMPETE2020. B. Vermang has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement no. 715027). A. Shongalova acknowledges the funding of Erasmus + program 2016/17. This work was funded by FEDER funds through the COMPETE 2020 Programme and by FCTPortuguese Foundation for Science and Technology under the projects UID/CTM/50025/2013. The financial support from Brazilian funding agencies CNPq, CAPES, and FAPEMIG is also acknowledged. ; info:eu-repo/semantics/publishedVersion