Factor Use Efficiency and Economies of Scale in State Transport Undertaking: An Intra Sector Comparison
In: The Indian economic journal, Band 47, Heft 2, S. 130-133
ISSN: 2631-617X
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In: The Indian economic journal, Band 47, Heft 2, S. 130-133
ISSN: 2631-617X
Business Ethics and Corporate Governance gives readers a comprehensive coverage of the theories of business ethics and corporate governance. This book emphasizes the importance of ethical principles in overcoming ethical dilemmas in the highly dynamic business world of today. It also provides a details explanation of the corporate governance mechanism. Its constituents and its implementation in India and abroad. Numerous real-life examples and case studies presented in this book help in the comprehension of concepts and discussions around these cases provide a better understanding of real-life business practices. A comprehensive, realistic, innovative, and practical approach to the subject makes this book the most student-friendly text in the market.
In: Defence science journal: a journal devotet to science & technology in defence, Band 58, Heft 5, S. 655-663
ISSN: 0011-748X
In: Defence science journal: DSJ, Band 58, Heft 5, S. 655-663
ISSN: 0011-748X
In: Defence science journal: DSJ, Band 66, Heft 4, S. 341
ISSN: 0011-748X
<p class="p1"> </p><p class="p2"><span class="s1"> </span>Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT), and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, <em>in-situ </em>SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.</p>