Suchergebnisse

Occupant safety in an armoured vehicle is of paramount importance. Most serious threat to armoured vehicles comes in the form of explosion of buried charge or an improvised explosive device. The use of numerical methods in the validation process of light armoured vehicles reduces the number of prototypes required and decreases the design time. This paper elucidates the process by which one such validation using numerical methods was done. The process of finite element method used for simulation of blast is a prominent method of numerical method of simulation. The finite element model (FEM) process starts with discretisation. By discretisation or meshing, Shell (Quad/Tria) and solid (Tetra/Hexa) elements are generated. The FEM thus created is provided with relevant material model / properties and loading and boundary conditions. The loading conditions are adopted from STANAG 4569 Level II standards. Local deformation, global displacement, stresses and time history of displacement of particular areas of interest are obtained as results. Comparison results include the effect of with and without thermal softening under blast. Based on the results and comparison, suggestions regarding re-engineering the vehicle are presented.

2 pages, 1 figure. ; Financial support by the Spanish Government Project under Grant Nos. MAT2008-06761-C03, Nanoselect CSD2007-00041, and Acción Integrada HF2007-0102, and by EU Projects MaCoMuFi under Contract No. FP6-03321 and ESTEEM under Contract No. 0260019 are acknowledged. ; Peer reviewed

<p class="p1"> </p><p class="p2"><span class="s1"> </span>Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT), and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, <em>in-situ </em>SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.</p>