Suchergebnisse

Seawater desalination and wastewater purification technologies are the main strategies against the global fresh water shortage. Among these technologies, solar-driven evaporation is effective in extracting fresh water by efficiently exploiting solar energy. However, building a sustainable and low-cost solar steam generator with high conversion efficiency is still a challenge. Here, pure organic aerogels comprising a cellulose scaffold decorated with an organic conducting polymer absorbing in the infrared are employed to establish a high performance solar steam generator. The low density of the aerogel ensures minimal material requirements, while simultaneously satisfying efficient water transport. To localize the absorbed solar energy and make the system floatable, a porous floating and thermal-insulating foam is placed between the water and the aerogel. Thanks to the high absorbance of the aerogel and the thermal-localization performance of the foam, the system exhibits a high water evaporation rate of 1.61 kg m(-2) h(-1) at 1 kW m(-2) under 1 sun irradiation, which is higher than most reported solar steam generation devices. ; Funding Agencies|Knut and Alice Wallenberg foundation (WWSC 2.0 project); Swedish Research CouncilSwedish Research Council [2016-03979]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; AForsk [18-313]; Finnish Foundation for Technology Promotion; Knut and Alice Wallenberg foundation (Tail of the Sun project)

The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things (IoT). The organic electrochemical transistor (OECT), which features large transconductance values at low operating voltages, is ideal for monitoring small signals. Here, low-power and high-gain flexible circuits based on printed complementary OECTs are reported. This work leverages the low threshold voltage of both p-type and n-type enhancement-mode OECTs to develop complementary voltage amplifiers that can sense voltages as low as 100 mu V, with gains of 30.4 dB and at a power consumption of 0.1-2.7 mu W (single-stage amplifier). At the optimal operating conditions, the voltage gain normalized to power consumption reaches 169 dB mu W-1, which is >50 times larger than state-of-the-art OECT-based amplifiers. In a monolithically integrated two-stage configuration, these complementary voltage amplifiers reach voltage gains of 193 V/V, which are among the highest for emerging complementary metal-oxide-semiconductor-like technologies operating at supply voltages below 1 V. These flexible complementary circuits based on printed OECTs define a new power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon applications. ; Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [SE13-0045]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; European Commission through the FET-OPEN project MITICS [GA-964677]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]

Doping of organic semiconductors is a powerful tool to optimize the performance of various organic (opto)electronic and bioelectronic devices. Despite recent advances, the low thermal stability of the electronic properties of doped polymers still represents a significant obstacle to implementing these materials into practical applications. Hence, the development of conducting doped polymers with excellent long-term stability at elevated temperatures is highly desirable. Here, we report on the sequential doping of the ladder-type polymer poly-(benzimidazobenzophenanthroline) (BBL) with a benzimidazole-based dopant (i.e., N-DMBI). By combining electrical, UV-vis/infrared, X-ray diffraction, and electron paramagnetic resonance measurements, we quantitatively characterized the conductivity, Seebeck coefficient, spin density, and microstructure of the sequentially doped polymer films as a function of the thermal annealing temperature. Importantly, we observed that the electrical conductivity of N-DMBI-doped BBL remains unchanged even after 20 h of heating at 190 degrees C. This finding is remarkable and of particular interest for organic thermoelectrics. ; Funding Agencies|Swedish Research CouncilSwedish Research Council [2016-03979]; AForsk [18-313, 19310]; Olle Engkvists Stiftelse [204-0256]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Finnish Cultural FoundationFinnish Cultural Foundation; Finnish Foundation for Technology Promotion; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [Dnr KAW 2014.0041]

Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs are yet at an early stage of development, with the best performing electron-transporting materials still suffering from low transconductance, low electron mobility, and slow response time. Here, the high electrical conductivity of multi-walled carbon nanotubes (MWCNTs) and the large volumetric capacitance of the ladder-type pi-conjugated redox polymer poly(benzimidazobenzophenanthroline) (BBL) are leveraged to develop n-type OECTs with record-high performance. It is demonstrated that the use of MWCNTs enhances the electron mobility by more than one order of magnitude, yielding fast transistor transient response (down to 15 ms) and high mu C* (electron mobility x volumetric capacitance) of about 1 F cm(-1) V-1 s(-1). This enables the development of complementary inverters with a voltage gain of >16 and a large worst-case noise margin at a supply voltage of <0.6 V, while consuming less than 1 mu W of power. ; Funding Agencies|Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [14-0074]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat- LiU 2009-00971]; European Commission through the FET-OPEN project MITICS [GA-964677]; VINNOVAVinnova [2020-05223]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF-2019R1A2C2085290, 2019R1A6A1A11044070]

A common way of determining the majority charge carriers of pristine and doped semiconducting polymers is to measure the sign of the Seebeck coefficient. However, a polarity change of the Seebeck coefficient has recently been observed to occur in highly doped polymers. Here, it is shown that the Seebeck coefficient inversion is the result of the density of states filling and opening of a hard Coulomb gap around the Fermi energy at high doping levels. Electrochemical n-doping is used to induce high carrier density (>1 charge/monomer) in the model system poly(benzimidazobenzophenanthroline) (BBL). By combining conductivity and Seebeck coefficient measurements with in situ electron paramagnetic resonance, UV-vis-NIR, Raman spectroelectrochemistry, density functional theory calculations, and kinetic Monte Carlo simulations, the formation of multiply charged species and the opening of a hard Coulomb gap in the density of states, which is responsible for the Seebeck coefficient inversion and drop in electrical conductivity, are uncovered. The findings provide a simple picture that clarifies the roles of energetic disorder and Coulomb interactions in highly doped polymers and have implications for the molecular design of next-generation conjugated polymers. ; Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [2020-03243]; Olle Engkvists Stiftelse [204-0256]; European CommissionEuropean CommissionEuropean Commission Joint Research Centre [GA-955837, GA-799477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germanys Excellence Strategy via the Excellence Cluster 3D Matter Made to OrderGerman Research Foundation (DFG) [EXC-2082/1-390761711]; Carl Zeiss Foundation; Deutsche ForschungsgemeinschaftGerman Research Foundation (DFG) [FA 1502/1-1]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [52173156]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [ITM17-0316]

A common way of determining the majority charge carriers of pristine and doped semiconducting polymers is to measure the sign of the Seebeck coefficient. However, a polarity change of the Seebeck coefficient has recently been observed to occur in highly doped polymers. Here, it is shown that the Seebeck coefficient inversion is the result of the density of states filling and opening of a hard Coulomb gap around the Fermi energy at high doping levels. Electrochemical n-doping is used to induce high carrier density (>1 charge/monomer) in the model system poly(benzimidazobenzophenanthroline) (BBL). By combining conductivity and Seebeck coefficient measurements with in situ electron paramagnetic resonance, UV–vis–NIR, Raman spectroelectrochemistry, density functional theory calculations, and kinetic Monte Carlo simulations, the formation of multiply charged species and the opening of a hard Coulomb gap in the density of states, which is responsible for the Seebeck coefficient inversion and drop in electrical conductivity, are uncovered. The findings provide a simple picture that clarifies the roles of energetic disorder and Coulomb interactions in highly doped polymers and have implications for the molecular design of next-generation conjugated polymers. ; Research funding the Swedish Research Council. Grant Number: 2020-03243 Olle Engkvists Stiftelse. Grant Number: 204-0256 European Commission. Grant Numbers: GA-955837, GA-799477 Swedish Government Strategic Research. Grant Number: 2009-00971 Deutsche Forschungsgemeinschaft. Grant Numbers: EXC-2082/1-390761711, FA 1502/1-1 National Natural Science Foundation of China. Grant Number: 52173156 the Swedish Foundation for Strategic Research

Conducting polymers, such as the p-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), have enabled the development of an array of opto- and bio-electronics devices. However, to make these technologies truly pervasive, stable and easily processable, n-doped conducting polymers are also needed. Despite major efforts, no n-type equivalents to the benchmark PEDOT:PSS exist to date. Here, we report on the development of poly(benzimidazobenzophenanthroline):poly(ethyleneimine) (BBL:PEI) as an ethanol-based n-type conductive ink. BBL:PEI thin films yield an n-type electrical conductivity reaching 8Scm(-1), along with excellent thermal, ambient, and solvent stability. This printable n-type mixed ion-electron conductor has several technological implications for realizing high-performance organic electronic devices, as demonstrated for organic thermoelectric generators with record high power output and n-type organic electrochemical transistors with a unique depletion mode of operation. BBL:PEI inks hold promise for the development of next-generation bioelectronics and wearable devices, in particular targeting novel functionality, efficiency, and power performance. The development of n-type conductive polymer inks is critical for the development of next-generation opto-electronic devices that rely on efficient hole and electron transport. Here, the authors report an alcohol-based, high performance and stable n-type conductive ink for printed electronics. ; Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF2020M3H4A3081814, 2019R1A6A1A11044070]; National Science FoundationNational Science Foundation (NSF) [DMR-2003518]