Suchergebnisse

H. Klym thanks to the Ministry of Education and Science of Ukraine for support and Dr. P. Demchenko for the assistance in XRD experiments. ; Crystallization transformation in the 80GeSe2-20Ga2Se3 chalcogenide glasses caused by annealing at 380 °C during different duration (25, 50, 80 and 100 hours) are studied using X-ray diffraction and atomic force microscopy methods. It is established that GeGa4Se phase of low- and high-temperature modification, Ga2Se3 phase (α- and γ-modification) and GeSe2 phases are crystallized during this process. It is shown that annealing duration over 50 h does not lead to further internal structural crystallization, while annealing for 80 h result in processes of surface crystallization. ; Ministry of Education and Science of Ukraine; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²