Ab initio material design of low-band gap double and vacancy ordered perovskites
Lead-based halide perovskites have emerged as a most prominent candidate for emerging opto-electronic applications. In this talk we will briefly showcase recent efforts towards designing new Pb-free semiconductors that are alternatives to traditional halide perovskites, for which computational approaches from first-principles have been extensively successful and revealed a series of new compounds within the so-called halide double perovskites family and vacancy ordered perovskites. Among these, Cs2BiAgBr6 has the narrower indirect band gap of 1.9 eV, [1] and Cs2InAgCl6 is the only direct band gap semiconductor, yet with a large gap of 3.3 eV. [2] All of them exhibit low carrier effective masses and consequently, are prominent candidates for a range of opto-electronic applications such as photovoltaics, light-emitting devices, sensors, and photo-catalysts. [3] We will specifically outline the computational ab initio design strategy that led to the synthesis of these compounds, and particularly focus on the insights we can get from first-principles calculations in order to facilitate the synthesis, improve their opto-electronic properties and the in-silico identification of compounds with properties that are similar to the lead-halide perovskites. The newly developed concept of analogs will lead us to identify a new oxide double perovskite semiconductor, Ba2AgIO6, which exhibits an electronic band structure remarkably similar to that of our recently discovered halide double perovskite Cs2AgInCl6, but with a band gap in the visible range at 1.9 eV. [4] In the final part of our talk, we will employ this strategy to explore the phase space of vacancy-ordered double perovskite and discuss the case of Zr-based compounds as stable alternates to Cs2TiX4 with X=Br,I, which exhibit lighter charge carrier effective masses.[5] This DROP-IT project has received funding from the European Union's Horizon 2020 research and innovation Program under the grant agreement No 862656. The information and views set out in the abstracts ...