"This book includes a collection of articles focusing on the widely-observed fandom phenomenon existing in contemporary consumer culture from multi-discipline perspective. It explores the characteristics fandom and the impact of fandom on any human activities, especially in brand building"--
This e-book is dedicated to helping you to get a better understanding of how China is both changing the global marketplace and is, in turn, experiencing change in its own consumer marketplace. The articles in this e-book were selected as they covered several important research topics which are very relevant in helping marketers to better understand how to achieve success in the Chinese marketplace. This is a most exciting collaboration which will be of great value to all marketers
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1 The Mechanisms of Hot Carrier Degradation -- 1.1 Introduction -- 1.2 Injection of Channel Hot Carriers in MOSFETs -- 1.3 Characterization Techniques -- 1.4 Charge Trapping and Dit-Generation Under Uniform Hot-Carrier Injection in MOSFETs -- 1.5 Charge Trapping and Dit-Generation Under Nonuniform Hot-Carrier Injection in MOSFETs -- 1.6 Conclusions -- 1.7 Acknowledgments -- References -- 2 Hot-Carrier Degradation Effects for DRAM Circuits -- 2.1 Introduction -- 2.2 Hot-Carrier Degradation in MOSFETs -- 2.3 Hot Carrier Impact on Circuit Operation -- 2.4 Circuit Hot-Electron Effect Simulation -- 2.5 ESD Latent Damage and Hot-Electron Reliability -- 2.6 Future Issues -- 2.7 Conclusions -- 2.8 Acknowledgments -- References -- 3 Hot Carrier Design Considerations in MOS Nonvolatile Memories -- 3.1 Introduction -- 3.2 Hot Carriers and EPROM -- 3.3 Hot Carriers and Flash Memory -- 3.4 Hot Carriers and Floating-Gate-Type EEPROMs -- 3.5 Hot Carriers and MNOS-Type EEPROMs -- 3.6 Conclusions -- 3.7 Acknowledgments -- References -- 4 Hot-Carrier Degradation During Dynamic Stress -- 4.1 The Problem of AC Hot-Carrier Degradation -- 4.2 Discussion of Transient Effects -- 4.3 Dynamic Degradation in Circuits -- 4.4 Conclusions -- References -- Appendices -- Appendix I On the Mathematical Formalism of the Hot-Carrier Currents in Semiconductor DevicesCheng T. Wang -- A1.1 Introduction -- A1.2 Mathematical Formalism -- A1.3 Conclusion -- References -- Appendix II Non-Local Field Effects on Carrier Transport in Ultra-Small-Size Devices Cheng T. Wang -- A2.1 Introduction -- A2.3 Drift Velocity as a Function of Distance -- A2.4 A Comparative Study of Field Effect on Drift Velocity -- A2.5 Conclusion -- A2.6 Acknowledgments -- References.
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Global pressures have urged organizations to incorporate sustainable international human resource management (IHRM) systems to be socially responsible. This paper proposes that integrating IHRM with corporate social responsibility (CSR) and shared value may be the solution This study analyzes sustainability within the IHRM field, including other sustainable concepts to demonstrate the relevance of labor and employment relation within human resource management. Employment relations and the importance of developing IHRM strategies involving workers and managers to increase shared value are also explained in the study. In turn, this integration enhances organizational performance and competitive advantage. Accordingly, this paper proposes a model to unleash the bridge between IHRM and employment relations in multinationals operating in emerging economies and proposes some propositions. Implications for research and practice are also discussed in the paper.