Suchergebnisse

The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things (IoT). The organic electrochemical transistor (OECT), which features large transconductance values at low operating voltages, is ideal for monitoring small signals. Here, low-power and high-gain flexible circuits based on printed complementary OECTs are reported. This work leverages the low threshold voltage of both p-type and n-type enhancement-mode OECTs to develop complementary voltage amplifiers that can sense voltages as low as 100 mu V, with gains of 30.4 dB and at a power consumption of 0.1-2.7 mu W (single-stage amplifier). At the optimal operating conditions, the voltage gain normalized to power consumption reaches 169 dB mu W-1, which is >50 times larger than state-of-the-art OECT-based amplifiers. In a monolithically integrated two-stage configuration, these complementary voltage amplifiers reach voltage gains of 193 V/V, which are among the highest for emerging complementary metal-oxide-semiconductor-like technologies operating at supply voltages below 1 V. These flexible complementary circuits based on printed OECTs define a new power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon applications. ; Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [SE13-0045]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; European Commission through the FET-OPEN project MITICS [GA-964677]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]

Organic electrochemical transistors (OECTs) hold promise for developing a variety of high-performance (bio-)electronic devices/circuits. While OECTs based on p-type semiconductors have achieved tremendous progress in recent years, n-type OECTs still suffer from low performance, hampering the development of power-efficient electronics. Here, it is demonstrated that fine-tuning the molecular weight of the rigid, ladder-type n-type polymer poly(benzimidazobenzophenanthroline) (BBL) by only one order of magnitude (from 4.9 to 51 kDa) enables the development of n-type OECTs with record-high geometry-normalized transconductance (g(m,norm) approximate to 11 S cm(-1)) and electron mobility x volumetric capacitance (mu C* approximate to 26 F cm(-1) V-1 s(-1)), fast temporal response (0.38 ms), and low threshold voltage (0.15 V). This enhancement in OECT performance is ascribed to a more efficient intermolecular charge transport in high-molecular-weight BBL than in the low-molecular-weight counterpart. OECT-based complementary inverters are also demonstrated with record-high voltage gains of up to 100 V V-1 and ultralow power consumption down to 0.32 nW, depending on the supply voltage. These devices are among the best sub-1 V complementary inverters reported to date. These findings demonstrate the importance of molecular weight in optimizing the OECT performance of rigid organic mixed ionic-electronic conductors and open for a new generation of power-efficient organic (bio-)electronic devices. ; Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; European Commission through the Marie Sklodowska-Curie project HORATES [GA-955837]; FET-OPEN project MITICS [GA-964677]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF-2019R1A2C2085290, 2019R1A6A1A11044070]; National Science FoundationNational Science Foundation (NSF) [DMR-2003518]

Conducting polymers, such as the p-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), have enabled the development of an array of opto- and bio-electronics devices. However, to make these technologies truly pervasive, stable and easily processable, n-doped conducting polymers are also needed. Despite major efforts, no n-type equivalents to the benchmark PEDOT:PSS exist to date. Here, we report on the development of poly(benzimidazobenzophenanthroline):poly(ethyleneimine) (BBL:PEI) as an ethanol-based n-type conductive ink. BBL:PEI thin films yield an n-type electrical conductivity reaching 8Scm(-1), along with excellent thermal, ambient, and solvent stability. This printable n-type mixed ion-electron conductor has several technological implications for realizing high-performance organic electronic devices, as demonstrated for organic thermoelectric generators with record high power output and n-type organic electrochemical transistors with a unique depletion mode of operation. BBL:PEI inks hold promise for the development of next-generation bioelectronics and wearable devices, in particular targeting novel functionality, efficiency, and power performance. The development of n-type conductive polymer inks is critical for the development of next-generation opto-electronic devices that rely on efficient hole and electron transport. Here, the authors report an alcohol-based, high performance and stable n-type conductive ink for printed electronics. ; Funding Agencies|Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-03979, 2020-03243]; AForsk [18-313, 19-310]; Olle Engkvists Stiftelse [204-0256]; VINNOVAVinnova [2020-05223]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF2020M3H4A3081814, 2019R1A6A1A11044070]; National Science FoundationNational Science Foundation (NSF) [DMR-2003518]