LIFE AND STATUS OF PRIMARY SCHOOL TEACHERS IN MOSCOW REGION IN THE SECOND HALF OF THE XIX CENTURY
In: Bulletin of the Moscow State Regional University (History and political science), Heft 5, S. 139-147
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In: Bulletin of the Moscow State Regional University (History and political science), Heft 5, S. 139-147
In: Journal of marine research, Band 62, Heft 4, S. 545-563
ISSN: 1543-9542
In: Journal of marine research, Band 58, Heft 4, S. 585-607
ISSN: 1543-9542
In: Journal of marine research, Band 70, Heft 1, S. 69-92
ISSN: 1543-9542
In: Journal of marine research, Band 66, Heft 6, S. 899-925
ISSN: 1543-9542
In: Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series, Band 63, Heft 2, S. 244-249
ISSN: 2524-244X
Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n–p–n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I–V characteristics of the various lots of the bipolar n–p–n-transistors, fabricated under the epitaxialplanar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n–p–n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector – base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n–p–n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.