Suchergebnisse

Under the background of production-education integration, cooperation between school and government, school and industry, school and enterprises, and school and research institutes, the construction of five-dimensional collaborative education mode needs to be oriented to serve the regional chemical industry. The five parties, such as schools, local governments, enterprises, industries and research institutes, participated in the construction of five-dimensional collaborative education mode, focusing on the construction of collaborative education platform, talent training objectives, curriculum system, teaching staff, practical teaching system and institutional mechanism in order to promote the integration of the curriculum chain, the talent chain and the industrial chain. The construction of this mode has an important reference value for realizing the scientific development of applied chemistry talent training in China.

In contrast to the plenitude of studies which use speeches, newspaper articles and books in presenting the Chinese state's crafting of nationalist narratives, there are few studies that use texts specifically designed for mass education. The authors conducted a content analysis of children's textbooks published by the education arm of the Communist Party of China (CPC) to reveal the narratives used to bolster its nationalism. While some of the findings are consistent with existing theories, such as portrayals of China's glorious history, claims to territory, forms of government, a foreign "other" as an enemy and economic development, key nuances emerge. The textbooks claim only Taiwan, but not other contentious areas such as Tibet, as part of China; the CPC government is described as a democracy much more than a communist state; the foreign "other" is not only an enemy, but also an endorser; and development refers not only to the country's economic gains but also to an intimate sphere created around an urban and middle-class norm. (China/GIGA)

Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. The results demonstrate that the synergistic effects are more serious than the simple sum of the two radiation effects due to their mutual enhancement. The change of the carrier recombination rate in the device at different positions shows that the displacement effects increase the peak value of surface recombination rate; meanwhile, the ionizing dose effects enhance the recombination process in bulk silicon. The mechanism of this phenomenon is that positive charges from the oxide layer and interface enhance the recombination of carriers in bulk, and the reduced carrier lifetime caused by defects from bulk makes carriers more likely to be trapped by the interface traps. In addition, the simulation result which shows the influence of temperature on the synergistic effects indicates that the synergistic effects are more sensitive to the lower temperature.