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1. Macroscopic Theory -- 1.1 Electromagnetic field in a solid -- 1.2 Dielectric constant and optical conductivity -- 1.3 Crystal symmetry -- 1.4 Propagation of waves -- 1.5 Kramers-Krönig relations -- 1.6 The sum rule -- 1.7 Dispersion theory of classical oscillators -- 2. Crystal Lattice Absorption -- 2.1 Vibrational modes of a crystal lattice -- 2.2 Photon-phonon interaction -- 2.3 Microscopic theory of infra-red dispersion -- 2.4 Two-phonon absorption -- 3. Interband Transitions -- 3.1 Electron energy bands -- 3.2 Direct transitions -- 3.3 Critical points -- 3.4 Absorption band edges -- 3.5 Indirect transitions -- 3.6 Infra-red absorption in superconductors -- 4. Free Carrier Absorption -- 4.1 Classical theory -- 4.2 Intraband transitions -- 4.3 Electron transport -- 4.4 Surface admittance -- 4.5 Infra-red absorption in metals -- 4.6 Free carrier absorption in semiconductors -- 5. Plasma Effects -- 5.1 Free electron model -- 5.2 Volume plasmons -- 5.3 Surface plasmons -- 6. Exciton Effects -- 6.1 Electron-hole interaction -- 6.2 Optical absorption -- 6.3 Inert-atom solids and alkali halides -- 6.4 Semiconductors -- 6.5 Spatial dispersion -- 7. Non-Linear Optics -- 7.1 Classification of non-linear effects -- 7.2 Non-linear susceptibilities -- 7.3 Second harmonic generation -- 7.4 Parametric amplification and oscillation -- 7.5 Third order effects -- References.

High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1GPa were around 0.15 and 0.23eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the direct bandgap than the original sample. A comprehensive explanation for these results on the basis of pressure-induced order-disorder processes is provided. ; This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-01/03/04 and MAT2013-46649-C4-1/2/3-P, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by Generalitat Valenciana (GVA-ACOMP-2013-1012 and GVA-ACOMP-2014-243), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E. P.-G., J. L.-S., P. R.-H, and A. M. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. J.R.-F. thanks the Alexander von Humboldt foundation for a postdoctoral fellowship. ; Gomis, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Ruiz-Fuertes, J.; Pérez-González, E.; López-Solano, J.; Bandiello, E. (2015). HgGa2Se4 under high pressure: an optical absorption study. physica status solidi (b). 252(9):2043-2051. https://doi.org/10.1002/pssb.201451714 ; S ; 2043 ; 2051 ; 252 ; 9 ; Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835 ; Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered ...

The concentration of nanosheet suspensions is an important technological parameter which is commonly measured by optical spectroscopy, using the absorption coefficient to transform absorbance into concentration. However, for all 2D materials, the absorption coefficient is poorly known, resulting in potentially large errors in measured concentration. Here we derive an expression relating the optical absorption coefficient of an isotropic dispersion of nanosheets to the intrinsic monolayer absorption. This has allowed us to calculate the absorption coefficients for suspensions of graphene, MoS2 and other 2D materials, and to estimate the monolayer absorption for new materials from careful measurement of the suspension absorption coefficient. ; The research leading to these results has received funding from the European Union Seventh Framework Program under grant agreement n?604391 Graphene Flagship. We have also received support from the Science Foundation Ireland (SFI) funded centre AMBER (SFI/12/RC/2278). In addition, JNC acknowledges the European Research Council (SEMANTICS) and SFI (11/PI/1087) for financial support

In this work, we have simulated the processes of broadening the first exciton band in optical absorption spectra (OA) for InP/ZnS ensembles of colloidal quantum dots (QDs). A phenomenological model has been proposed that takes into account the effects of the exciton–phonon interaction, and allows one to analyze the influence of the static and dynamic types of atomic disorder on the temperature changes in the spectral characteristics in question. To vary the degree of static disorder in the model system, we have used a parameter δ, which characterizes the QD dispersion in size over the ensemble. We have also calculated the temperature shifts of the maxima and changes in the half-width for the exciton peaks in single nanocrystals (δ = 0), as well as for the integrated OA bands in the QD ensembles with different values of δ = 0.6–17%. The simulation results and the OA spectra data measured for InP/ZnS nanocrystals of 2.1 nm (δ = 11.1%) and 2.3 nm (δ = 17.3%), are in good mutual agreement in the temperature range of 6.5 K–RT. It has been shown that the contribution of static disorder to the observed inhomogeneous broadening of the OA bands for the QDs at room temperature exceeds 90%. The computational experiments performed indicate that the temperature shift of the maximum for the integrated OA band coincides with that for the exciton peak in a single nanocrystal. In this case, a reliable estimate of the parameters of the fundamental exciton–phonon interaction can be made. Simultaneously, the values of the specified parameters, calculated from the temperature broadening of the OA spectra, can be significantly different from the true ones due to the effects of static atomic disorder in real QD ensembles. © 2019 by the authors. Licensee MDPI, Basel, Switzerland. ; Funding: This research was supported by RFBR according to the research project № 18-32-00664 and Act 211 Government of the Russian Federation, contract no. 02.A03.21.0006. I.W. thanks the Minobrnauki initiative research project № 16.5186.2017/8.9 for support.

14 pages,8 figures, 6 tables; available on line 5 September 2013 ; Arc discharge single-walled carbon nanotubes (SWCNTs) were modified through different oxidative treatments and functionalization reactions. The modified SWCNT powders were dispersed in four different aqueous media and purified by ultracentrifugation. Extinction coefficients of the modified SWCNTs depended on the SWCNT type but did not depend on the dispersion medium. According to visible/near infrared spectroscopy, the purity of all the modified SWCNT dispersions substantially improved after ultracentrifugation; however, the spectrum profile, the degree of purity and the centrifugation yield were influenced by the SWCNT type, the surface functional groups and the dispersion medium. Semi-quantitative purity indexes calculated from optical absorption spectra were supported by transmission electron microscopy observations. Contents in metal impurities were analyzed by energy dispersive X-ray spectroscopy. SWCNT samples processed by oxidative acid treatments and ultracentrifugation showed metal contents of lower than 0.5 wt%. ; This work was funded by the Spanish MINECO under the projects TEC2010-15736 and PRI-PIBAR-2011-1, and the Government of Aragon (DGA) and the European Social Fund (ESF) under Project DGA-ESF-T66 CNN. ; Peer Reviewed

et al. ; Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I N42m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 °C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I N4 space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa 2Se4. © 2013 IOP Publishing Ltd. ; This study was supported by the Spanish government MEC under grants MAT2010-21270-C04-01/03/04 and MAT2010-19837-C06-06, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigación y Desarrollo of the Universitat Politècnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). ; Peer Reviewed

Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I (4) over bar 2m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 degrees C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I (4) over bar space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa2Se4. ; This study was supported by the Spanish government MEC under grants MAT2010-21270-C04-01/03/04 and MAT2010-19837-C06-06, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). EP-G, AM, and PR-H acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. Finally, the authors would also like to acknowledge M C Moron for stimulating discussions and revision of the present manuscript. ; Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Ortiz, HM.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Muñoz, A. (2013). Thermally-activated cation ordering in ZnGa2Se4 single crystals studied by Raman scattering, optical absorption, and ab initio calculations. Journal of Physics: Condensed ...

165802-1 165802-11 25 16 ; S Hahn, H., Frank, G., Klingler, W., St�rger, A. D., & St�rger, G. (1955). Untersuchungen �ber tern�re Chalkogenide. VI. �ber Tern�re Chalkogenide des Aluminiums, Galliums und Indiums mit Zink, Cadmium und Quecksilber. Zeitschrift f�r anorganische und allgemeine Chemie, 279(5-6), 241-270. doi:10.1002/zaac.19552790502 Haeuseler, H. (1978). FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber. Journal of Solid State Chemistry, 26(4), 367-376. doi:10.1016/0022-4596(78)90171-8 Perdew, J. P., Burke, K., & Ernzerhof, M. (1997). Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]. Physical Review Letters, 78(7), 1396-1396. doi:10.1103/physrevlett.78.1396 ; Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I (4) over bar 2m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 degrees C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I (4) over bar space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa2Se4. This study was supported by the Spanish government MEC under grants MAT2010-21270-C04-01/03/04 and ...