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In this paper, the productions of gallium oxide (Ga2O3) nanoparticles were achieved via using the Nd: YAG laser deposition method with a fundamental wavelength (1064 nm). These nanoparticles were characterized by using different methods such as X-ray diffractometer (XRD), atomic force microscopy (AFM) and Ultraviolet–visible (UV–vis) spectroscopy. To examine the effects of laser energy on the properties of nanoparticles, the experimental results and theoretical considerations were prepared by the effective method of pulse laser deposition. The synthesis of Ga2O3NPs) was achieved with different ranges of energies (500 to 900 mJ). Average crystallite sizes of the synthesized nanoparticles were found to be in the range of 15-37 nm. On the other hand, the AFM images showed that the size is ranging between 60 and 85 nm. Optical parameters of the samples showed a strong dependence on average crystallite size.

In this paper Zener diode was designed by mixing three mixing ratios of Ag2O(1-x)ZnO(x), where x is 0.5, 0.3, and 0.1, that are deposited on a p-type porous silicon using laser induced plasma technique at room temperature (RT). The results of the Zener diode showed a decrease in knee and Zener voltage when the mixing ratio of Ag2O(1-x)ZnO(x) structure was increased. Nanofilms of 200nm thickness were prepared from pure ZnO and Ag2O as well as Ag2O(1-x)ZnO(x) with three maxing ratios and deposited on glass slides at RT to analyze the structure and optical properties. The structures of Ag2O and Ag2O(1-x)ZnO(x) showed high absorbance in the visible region with redshift in spectra when the mixing ratio was increased, while ZnO had a high absorbance in the ultraviolet region. It is concluded that when the value of x increases the energy gap value for the Ag2O(1-x)ZnO(x) structure decreases.