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An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution. ; The authors would like to heartily thank the Clean Room staff of the IMB-CNM for their dedicated work and kind availability. This work is supported and financed in part by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program, ref. FPA2014-55295-C3-2-R and FPA2015-65652-C4-4-R (MINECO/FEDER, UE), and co-financed with FEDER funds and the European Union's Horizon 2020 research and innovation programme under grant agreement No. 654158. The work is also partially supported by the Generalitat de Catalunya (2014-SGR-1596). The authors want to thank Pedro Valdivieso and co-workers at NAYADE facility (CIEMAT) and the staff on the TRIGA nuclear reactor facilities (JSI), for their efficiency and dedication in performing the managing and irradiation of our devices. ; We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI).

Proceeding of the 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors.-- et al. ; This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n–p–p structure, where the doping profile of the p layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work. ; This work was developed in the framework of the CERN RD50 collaboration and financed by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program (FPA2013-48308-C2-2-P, FPA2014-55295-C3-2-R and FPA2013-48387-C6-1-P). This project has received funding from the European Union's Horizon 2020 Research and Innovation program under Grant Agreement no. 654168 (AIDA-2020). ; Open Access funded by CERN. ; Peer Reviewed

On behalf of the CMS Collaboration: et al. ; Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK Italy and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about 1 × 10 ≠cm (1MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments. ; This project has been partially supported by the Spanish Ministry of Science, Innovation and Universities under grants FPA2015-71292-C2-2-P, FPA2017-85155-C4-1-R and FPA2017-85155-C4-2-R; and the European Union's Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168 (AIDA-2020).