Suchergebnisse

Ustedes se ocupan e ver si se puede hacer de acceso público. Podria buscra el preprint al ser algo reciente. ; Se estudia el comportamiento bajo alta presión del vanadato de scandio, ScVO4, bajo compresión no hidrostática. El estudio se realiza mediante difracción de rayos X en polvo usando radiación sincrotrón. Se detecta una transición no reversible desde la fase zircon a la fase fergusonita alrededor de 6 GPa con una discontinuidad en el volumen de un 10%. La fase fergusonota se puede recuperar como metaestable confirmandose mediante XRD. Las simulaciones ab intio confirman los resultados experimentales. Las propiedades ópticas y la propiedades vibracionales de la fase fergusonita son discutidas. A presión ambiuente el gap de la fase zircon (fergusonita) es 2.75 eV (2.3 eV). Esto sugiere que este nuevo polimorfo metaestable del ScVO4 puede tener aplicaciones en tecnologias verdes, por ejemplo siendo usado como materal fotocatalitico para producción de hidrógeno mediante disociación de agua. ; The high-pressure (HP) behaviour of scandium vanadate (ScVO4) is investigated under non-hydrostatic compression. The compound is studied by means of synchrotron-based powder x-ray diffraction (XRD) and optical-absorption techniques. The occurrence of a non-reversible phase transition is detected. The transition is from the zircon structure to the fergusonitetype structure and takes place around 6 GPa with nearly 10% volume discontinuity. XRD measurements on the pressure cycled sample confirm for the first time that the fergusonitetype ScVO4 can be recovered as the metastable phase at ambient conditions. Raman spectroscopic measurements verify the metastable phase to be of a fergusonite-type phase. Theoretical calculations also corroborate the experimental findings. The fergusonite phase is found to be stiffer than the ambient-pressure zircon phase, as indicated by the observed experimental and theoretical bulk moduli. The optical properties and lattice-dynamics calculation of the fergusonite ScVO4 are discussed. At ambient pressure the band gap of the zircon (fergusonite)-type ScVO4 is 2.75 eV (2.3 eV). This fact suggests that the novel metastable polymorph of ScVO4 can have applications in green technologies; for instance, it can be used as photocatalytic material for hydrogen production by water splitting. ; DST, India for travel support and the Italian Government for hospitality at Elettra, Italy. This paper was partially supported by the Spanish Ministerio de Econom¿a y Competitividad (MINECO) under GrantsNo. MAT2013-46649-C04-01/03-P, MAT2016-75586-C4-1/3-P, and No.MAT2015-71070-REDC (MALTA Consolider).

In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa2S4 evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibility of the pressure-induced order-disorder processes occurring in ordered-vacancy compounds. The pressure dependence of the Raman modes of all phases, except the Raman-inactive disordered rocksalt phase, have been measured and discussed. ; This study was supported by the Spanish government MEC under Grant No: MAT2010-21270-C04-01/03/04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universidad Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E. P.-G., P. R.-H., and A. M. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. J.A.S. acknowledges Juan de la Cierva fellowship program for his financial support. ; Vilaplana Cerda, RI.; Robledillo, M.; Gomis Hilario, O.; Sans, J.; Manjón Herrera, FJ.; Pérez-González, E.; Rodríguez-Hernández, P. (2013). Vibrational study of HgGa2S4 under high pressure. Journal of Applied Physics. 113(9):935121-9351210. ...

We report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of layered monoclinic arsenic sulfide crystals (α-As2S3), aka mineral orpiment, under compression. X-ray diffraction and Raman scattering measurements performed on orpiment samples at high pressure and combined with ab initio calculations have allowed us to determine the equation of state and the tentative assignment of the symmetry of many Raman-active modes of orpiment. From our results, we conclude that no first-order phase transition occurs up to 25 GPa at room temperature; however, compression leads to an isostructural phase transition above 20 GPa. In fact, the As coordination increases from threefold at room pressure to more than fivefold above 20 GPa. This increase in coordination can be understood as the transformation from a solid with covalent bonding to a solid with metavalent bonding at high pressure, which results in a progressive decrease of the electronic and optical bandgap, an increase of the dielectric tensor components and Born effective charges, and a considerable softening of many high-frequency optical modes with increasing pressure. Moreover, we propose that the formation of metavalent bonding at high pressures may also explain the behavior of other group-15 sesquichalcogenides under compression. In fact, our results suggest that group-15 sesquichalcogenides either show metavalent bonding at room pressure or undergo a transition from p-type covalent bonding at room pressure towards metavalent bonding at high pressure, as a precursor towards metallic bonding at very high pressure. ; Authors thank the financial support from Spanish Ministerio de Economia y Competitividad (MINECO) through MAT2016-75586-C4-2/3-P and FIS2017-83295-P and from Generalitat Valenciana under project PROMETEO/2018/123-EFIMAT. ELDS acknowledges the European Union Horizon 2020 research and innovation programme under Marie Sklodowska-Curie for grant agreement No. 785789-COMEX. JAS also acknowledges Ramón y Cajal program for funding support through RYC-2015-17482. AM, SR and ELDS thank interesting discussions with J. Contreras-García who taught them how to analyze the ELF. Finally, authors thank ALBA Light Source for beam allocation at beamline MSPD (Experiment No. 2013110699) and acknowledge computing time provided by MALTA-Cluster and Red Española de Supercomputación (RES) through computer resources at MareNostrum with technical support provided by the Barcelona Supercomputing Center (QCM-2018-3-0032). ; Peer reviewed

57th European High Pressure Research Group Meeting on High Pressure Science and Technology (EHPRG2019) in Prague, 1-6 september 2019 ; Metavalent or resonant bonding is a recently proposed new class of bonding that is intermediate between p-type covalent bonding and metallic bonding. It characterizes a new family of materials known as "incipient metals" [1]. Metavalent bonding occurs in materials where there is a deficiency of valence electrons in the unit cell to form a large number of bonds, such as in octahedrally-coordinated rocksalt-related structures occurring in GeTe, SnTe, PbSe, PbTe, Sb2Te3, Bi2Te3, Bi2Se3, Sb, Bi and AgSb2Te4. The main characteristics of metavalent bonding are: i) a much higher cation coordination than that assumed with the 8-N rule; ii) very high Born effective charge and optical dielectric constant as compared to typical covalent materials; iii) high mode Grüneisen parameters of phonons and low wavenumbers of optical phonons as compared to typical covalent materials; and iv) a moderately high electrical conductivity caused by thesmall bandgap which stems from the partial delocalization of electrons between several bonds ; This work has been financially supported by Spanish MINECO under projects FIS2017-83295-P and MAT2016-75586-C4-1/2/3-P and by Generalitat Valenciana under project PROMETEO/2018/123-EFIMAT. Supercomputer time has been provided by the Red Española de Supercomputación (RES) and the MALTA cluster. JAS acknowledges "Ramón y Cajal" fellowship (RYC-2015-17482) and E.L.d.S acknowledges Marie Sklodowska-Curie grant No. 785789-COMEX from European Union's Horizon 2020 research and innovation programme. We also thank ALBA synchrotron for funded experiments.

High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20¿GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. © 2013 AIP Publishing LLC ; This study was supported by the Spanish government MEC under Grants No. MAT2010-21270-C04-01/03/04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E.P.-G., A.M., and P.R.-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. ; Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Ortiz, HM.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Muñoz, A. (2013). High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4. Journal of Applied Physics. 113:2335011-23350110. https://doi.org/10.1063/1.4810854 ; S ; 2335011 ; 23350110 ; 113 ; A. ...

165802-1 165802-11 25 16 ; S Hahn, H., Frank, G., Klingler, W., St�rger, A. D., & St�rger, G. (1955). Untersuchungen �ber tern�re Chalkogenide. VI. �ber Tern�re Chalkogenide des Aluminiums, Galliums und Indiums mit Zink, Cadmium und Quecksilber. Zeitschrift f�r anorganische und allgemeine Chemie, 279(5-6), 241-270. doi:10.1002/zaac.19552790502 Haeuseler, H. (1978). FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber. Journal of Solid State Chemistry, 26(4), 367-376. doi:10.1016/0022-4596(78)90171-8 Perdew, J. P., Burke, K., & Ernzerhof, M. (1997). Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]. Physical Review Letters, 78(7), 1396-1396. doi:10.1103/physrevlett.78.1396 ; Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I (4) over bar 2m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 degrees C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I (4) over bar space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa2Se4. This study was supported by the Spanish government MEC under grants MAT2010-21270-C04-01/03/04 and ...

Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown sample with tetragonal defect stannite (DS) structure and I (4) over bar 2m space group has been subjected to controlled heating and cooling cycles. In situ Raman scattering measurements carried out during the whole annealing cycle show that annealing the sample to 400 degrees C results in a cation ordering in the sample, leading to the crystallization of the ordered tetragonal defect chalcopyrite (DC) structure with I (4) over bar space group. On decreasing temperature the ordered cation scheme of the DC phase can be retained at ambient conditions. The symmetry of the Raman-active modes in both DS and DC phases is discussed and the similarities and differences between the Raman spectra of the two phases emphasized. The ordered structure of annealed samples is confirmed by optical absorption measurements and ab initio calculations, that show that the direct bandgap of DC-ZnGa2Se4 is larger than that of DS-ZnGa2Se4. ; This study was supported by the Spanish government MEC under grants MAT2010-21270-C04-01/03/04 and MAT2010-19837-C06-06, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). EP-G, AM, and PR-H acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. Finally, the authors would also like to acknowledge M C Moron for stimulating discussions and revision of the present manuscript. ; Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Ortiz, HM.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Muñoz, A. (2013). Thermally-activated cation ordering in ZnGa2Se4 single crystals studied by Raman scattering, optical absorption, and ab initio calculations. Journal of Physics: Condensed ...

The structural and vibrational properties of bismuth selenide (Bi2Se3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been complemented with ab initio total-energy and lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral (R-3m) phase (B-Bi2Se3) with sixfold coordination for Bi to a monoclinic C2/m structure (B-Bi2Se3) with sevenfold coordination for Bi above 10 GPa. The equation of state and the pressure dependence of the lattice parameters and volume of a and B phases of Bi2Se3 are reported. Furthermore, the presence of a pressure-induced electronic topological phase transition in B-Bi2Se3 is discussed. Raman measurements evidence that Bi2Se3 undergoes two additional phase transitions around 20 and 28 GPa, likely toward a monoclinic C2/c and a disordered body-centered cubic structure with 8-fold and 9- or 10-fold coordination, respectively. These two high-pressure structures are the same as those recently found at high pressures in Bi2Te3 and Sb2Te3. On pressure release, Bi2Se3 reverts to the original rhombohedral phase after considerable hysteresis. Symmetries, frequencies, and pressure coefficients of the Raman and infrared modes in the different phases are reported and discussed. ; This work was done under financial support from Spanish Ministry of Science and Innovation under Projects No. MAT2007-66129, No. MAT2010-21270-C04-03/04, and No. CSD-2007-00045 and from the Valencian government under Project No. Prometeo/2011-035. It is also supported by the Ministry of Education, Youth and Sports of the Czech Republic Project No. MSM 0021627501.

In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation-anion and vacancy-anion distances and compressibilities in HgGa2S4 are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2S4 has been studied. Our calculations indicate that the low-pressure phase of HgGa2S4 becomes mechanically unstable above 13.8 GPa. (C) 2013 Elsevier B. V. All rights reserved. ; This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-01/03/04 and CTQ2009-14596-C02-01, by the Comunidad de Madrid and European Social Fund (S2009/PPQ-1551 4161893), by MALTA Consolider Ingenio 2010 Project (CSD2007-00045), by Generalitat Valenciana (GVA-ACOMP-2013-1012), and by the Vicerrectorado de Investigacion y Desarrollo of the Universidad Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E.P-G., A. M., and P.R-H. acknowledge computing time provided by Red Espa ola de Supercomputacion (RES) and MALTA-Cluster. J.A.S. acknowledges Juan de la Cierva fellowship program for financial support. ; Gomis Hilario, O.; Santamaría-Pérez, D.; Vilaplana Cerda, RI.; Luna Molina, R.; Sans, JA.; Manjón Herrera, FJ.; Errandonea, D. (2014). Structural and elastic properties of defect chalcopyrite HgGa2S4 under ...

The structural properties of Thallium (III) oxide (Tl2O3) have been studied both experimentally and theoretically under compression at room temperature. X-ray powder diffraction measurements up to 37.7 GPa have been complemented with ab initio total-energy calculations. The equation of state of Tl2O3 has been determined and compared to related compounds. It has been found experimentally that Tl2O3 remains in its initial cubic bixbyite-type structure up to 22.0 GPa. At this pressure, the onset of amorphization is observed, being the sample fully amorphous at 25.2 GPa. The sample retains the amorphous state after pressure release. To understand the pressure-induced amorphization process, we have studied theoretically the possible high-pressure phases of Tl2O3. Although a phase transition is theoretically predicted at 5.8 GPa to the orthorhombic Rh2O3-II-type structure and at 24.2 GPa to the orthorhombic alpha-Gd2S3-type structure, neither of these phases were observed experimentally, probably due to the hindrance of the pressure-driven phase transitions at room temperature. The theoretical study of the elastic behavior of the cubic bixbyite-type structure at high-pressure shows that amorphization above 22 GPa at room temperature might be caused by the mechanical instability of the cubic bixbyite-type structure which is theoretically predicted above 23.5 GPa. (C) 2014 AIP Publishing LLC. ; This study was supported by the Spanish government MEC under Grant Nos. MAT2010-21270-C04-01/03/04, MAT2013-46649-C4-1/2/3-P, and CTQ2009-14596-C02-01, by the Comunidad de Madrid and European Social Fund (S2009/PPQ-1551 4161893), by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by Generalitat Valenciana (GVA-ACOMP-2013-1012 and GVA-ACOMP-2014-243). We acknowledge Diamond Light Source for time on beamline I15 under proposal EE6517 and I15 beamline scientist for technical support. A.M. and P.R.-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. B.G.-D. and J.A.S. ...

The structural and vibrational properties of bismuth selenide (Bi 2Se 3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been complemented with ab initio total-energy and lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral (R-3m) phase (¿-Bi 2Se 3) with sixfold coordination for Bi to a monoclinic C2/m structure (ß-Bi 2Se 3) with sevenfold coordination for Bi above 10 GPa. The equation of state and the pressure dependence of the lattice parameters and volume of ¿ and ß phases of Bi 2Se 3 are reported. Furthermore, the presence of a pressure-induced electronic topological phase transition in ¿-Bi 2Se 3 is discussed. Raman measurements evidence that Bi 2Se 3 undergoes two additional phase transitions around 20 and 28 GPa, likely toward a monoclinic C2/c and a disordered body-centered cubic structure with 8-fold and 9- or 10-fold coordination, respectively. These two high-pressure structures are the same as those recently found at high pressures in Bi 2Te 3 and Sb 2Te 3. On pressure release, Bi 2Se 3 reverts to the original rhombohedral phase after considerable hysteresis. Symmetries, frequencies, and pressure coefficients of the Raman and infrared modes in the different phases are reported and discussed. © 2011 American Physical Society. ; This work was done under financial support from Spanish Ministry of Science and Innovation under Projects No. MAT2007-66129, No. MAT2010-21270-C04-03/04, and No. CSD-2007-00045 and from the Valencian government under Project No. Prometeo/2011-035. It is also supported by the Ministry of Education, Youth and Sports of the Czech Republic Project No. MSM 0021627501. E.P.G. acknowledges the financial support of the Spanish Ministry of Education. Supercomputer time was provided by the Red Espanola de Supercomputacion and the MALTA cluster. ; Vilaplana Cerda, RI.; Santamaría-Pérez, D.; Gomis Hilario, O.; Manjón Herrera, FJ.; ...

135181 1351815 111 1 ; S Krämer, V., Siebert, D., & Febbraro, S. (1984). Structure refinement of cadmium gallium selenide CdGa2Se4. Zeitschrift für Kristallographie, 169(1-4), 283-287. doi:10.1524/zkri.1984.169.1-4.283 ; High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6¿8 GPa during the first upstroke. © 2012 American Institute of Physics This study was supported by the Spanish government MICINN under Grant No. MAT2010-21270-C04-01/03/04; by the Generalitat Valenciana (Project No. GV06/151), by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2012-1469), and by the Spanish MICINN under Project No. CTQ2009-14596-C02-01 and Comunidad de Madrid and the European Social Fund Grant No. S2009/PPQ-1551 4161893 (QUI-MAPRES). E.P-G., J.L-S., A. M., and P.R-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Pérez-González, E.; López-Solano, J.; Rodríguez-Hernández, P.; Muñoz, A. (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder ...

High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6¿8 GPa during the first upstroke. © 2012 American Institute of Physics ; This study was supported by the Spanish government MICINN under Grant No. MAT2010-21270-C04-01/03/04; by the Generalitat Valenciana (Project No. GV06/151), by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2012-1469), and by the Spanish MICINN under Project No. CTQ2009-14596-C02-01 and Comunidad de Madrid and the European Social Fund Grant No. S2009/PPQ-1551 4161893 (QUI-MAPRES). E.P-G., J.L-S., A. M., and P.R-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. ; Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Pérez-González, E.; López-Solano, J.; Rodríguez-Hernández, P.; Muñoz, A. (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds. Journal of Applied Physics. 111(1):135181-1351815. https://doi.org/10.1063/1.3675162 ; S ; 135181 ; 1351815 ; 111 ; 1 ; A. MacKinnon, in Tables of Numerical Data and Functional ...